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| STGD6NC60HD N-CHANNEL 6A - 600V DPAK Very Fast PowerMESHTM IGBT TARGET SPECIFICATION Table 1: General Features TYPE STGD6NC60HDT4 s s s Figure 1: Package VCES 600 V VCE(sat) IC (Max) @25C @100C < 2.5 V 6A s s s s LOWER ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOSSES INCLUDE DIODE RECOVERY ENERGY LOWER CRES/CIES RATIO HIGH FREQUENCY OPERATION VERY SOFT ULTRA FAST RECOVERY ANTI PARALLEL DIODE NEW GENERATION PRODUCTS WITH TIGHTER PARAMETER DISTRIBUTION 3 1 DPAK Figure 2: Internal Schematic Diagram DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESHTM IGBTs, with outstanding performances. The suffix "H" identifies a family optimized for high frequency applications in order to achieve very high switching performances (reduced tfall) mantaining a low voltage drop. APPLICATIONS HIGH FREQUENCY INVERTERS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s MOTOR DRIVERS s Table 2: Order Code PART NUMBER STGD6NC60HDT4 MARKING GD6NC60HD PACKAGE DPAK PACKAGING TAPE & REEL Rev. 1 June 2005 This is a preliminary information on a new product foreseen to be developed. Details are subjet to change without notice 1/9 STGD6NC60HD Table 3: Absolute Maximum ratings Symbol VCES VECR VGE IC IC ICM ( ) IF PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuous) at TC = 25C (#) Collector Current (continuous) at TC = 100C (#) Collector Current (pulsed) Diode RMS Forward Current at TC = 25C Total Dissipation at TC = 25C Derating Factor Storage Temperature Operating Junction Temperature Value 600 20 20 10 6 24 TBD 50 0.40 - 55 to 150 Unit V V V A A A A W W/C C ( ) Pulse width limited by max. junction temperature. Table 4: Thermal Data Min. Rthj-case Rthj-amb TL Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature for Soldering Purpose (1.6 mm from case, for 10 sec.) 275 Typ. Max. 2.5 100 C/W C/W C ELECTRICAL CHARACTERISTICS (TCASE =25C UNLESS OTHERWISE SPECIFIED) Table 5: Main Parameters Symbol VBR(CES) ICES IGES VGE(th) VCE(sat) Parameter Collector-Emitter Breakdown Voltage Collector cut-off Current (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Gate Threshold Voltage Collector-Emitter Saturation Voltage Test Conditions IC = 1 mA, VGE = 0 VCE = Max Rating, TC = 25 C VCE = Max Rating, TC = 125 C VGE = 20V , VCE = 0 VCE = VGE, IC = 250 A VGE = 15V, IC = 3 A VGE = 15V, IC = 3 A, Tc= 125C 3.75 1.9 1.7 Min. 600 10 1 100 5.75 2.5 Typ. Max. Unit V A mA nA V V V (#) Calculated according to the iterative formula: T -T JMAX C I ( T ) = ------------------------------------------------------------------------------------------------CC R xV (T , I ) THJ - C CESAT ( M AX ) C C 2/9 STGD6NC60HD ELECTRICAL CHARACTERISTICS (CONTINUED) Table 6: Dynamic Symbol gfs (1) Cies Coes Cres Qg Qge Qgc ICL Parameter Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Turn-Off SOA Minimum Current VCE = 390 V, IC = 3 A, VGE = 15 V (see Figure 5) Vclamp = 480 V , Tj = 150C RG = 10 , VGE = 15 V TBD Test Conditions VCE = 15 V , IC = 3 A VCE = 25 V, f= 1 MHz, VGE = 0 Min. Typ. TBD 320 28 7.2 15 TBD TBD TBD Max. Unit S pF pF pF nC nC nC A (1) Pulsed: Pulse duration= 300 s, duty cycle 1.5% Table 7: Switching On Symbol td(on) tr (di/dt)on td(on) tr (di/dt)on Parameter Turn-on Delay Time Current Rise Time Turn-on Current Slope Turn-on Delay Time Current Rise Time Turn-on Current Slope Test Conditions VCC = 390 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 3) VCC = 390 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD Max. Unit ns ns A/s ns ns A/s Table 8: Switching Off Symbol tr(Voff) td(off) tf tr(Voff) td(off) tf Parameter Off Voltage Rise Time Turn-off Delay Time Current Fall Time Off Voltage Rise Time Turn-off Delay Time Current Fall Time Test Conditions Vcc = 390 V, IC = 3 A, RG = 10 , VGE = 15 V TJ = 25 C (see Figure 3) Vcc = 390 V, IC = 3 A, RG = 10 , VGE = 15 V Tj = 125 C (see Figure 3) Min. Typ. TBD TBD 70 TBD TBD TBD Max. Unit ns ns ns ns ns ns Table 9: Switching Energy Symbol Eon (2) Eoff (3) Ets Eon (2) Eoff (3) Ets Parameter Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Turn-on Switching Losses Turn-off Switching Loss Total Switching Loss Test Conditions VCC = 390 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 25C (see Figure 3) VCC = 390 V, IC = 3 A RG= 10 , VGE= 15V, Tj= 125C (see Figure 3) Min. Typ. TBD TBD TBD TBD TBD TBD Max Unit J J J J J J (2) Eon is the turn-on losses when a typical diode is used in the test circuit in figure 2. If the IGBT is offered in a package with a co-pack diode, the co-pack diode is used as external diode. IGBTs & DIODE are at the same temperature (25C and 125C) (3) Turn-off losses include also the tail of the collector current. 3/9 STGD6NC60HD Table 10: Collector-Emitter Diode Symbol Parameter Test Condiction Min. Typ. Max. 2.1 Unit Vf trr ta Qrr Irrm S trr ta Qrr Irrm S Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current Softness factor of the diode If = 1.5 A If = 1.5 A, Tj = 125 C If = 1.5 A, VR = 40 V, Tj = 25 C, di/dt = 100 A/s (see Figure 6) 1.6 1.3 TBD TBD TBD TBD TBD TBD TBD TBD TBD TBD V V ns ns nC A If = 1.5 A, VR = 40 V, Tj = 125 C, di/dt = 100 A/s (see Figure 6) ns ns nC A 4/9 STGD6NC60HD Figure 3: Test Circuit for Inductive Load Switching Figure 5: Gate Charge Test Circuit Figure 4: Switching Waveforms Figure 6: Diode Recovery Time Waveforms 5/9 STGD6NC60HD TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0o P032P_B 6/9 STGD6NC60HD DPAK FOOTPRINT All dimensions are in millimeters TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 16.4 50 22.4 18.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0.795 0.645 0.724 1.968 0.881 BULK QTY 2500 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 B1 D D1 E F K0 P0 P1 P2 R W BASE QTY 2500 mm MIN. 6.8 10.4 1.5 1.5 1.65 7.4 2.55 3.9 7.9 1.9 40 15.7 16.3 inch MIN. MAX. 7 0.267 0.275 0.409 0.417 0.476 0.059 0.063 0.059 0.065 0.073 0.291 0.299 0.100 0.108 0.153 0.161 0.311 0.319 0.075 0.082 1.574 0.618 0.641 MAX. 10.6 12.1 1.6 1.85 7.6 2.75 4.1 8.1 2.1 7/9 STGD6NC60HD Table 11: Revision History Date 14-Jun-2005 Revision 1 First release Description of Changes 8/9 STGD6NC60HD Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics All other names are the property of their respective owners (c) 2005 STMicroelectronics - All Rights Reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 9/9 |
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